Title :
Influence of Cl doping in the optical and electrical properties of ZnSe grown by molecular beam epitaxy
Author :
de Melo, O. ; Hernández, L. ; Meléndez-Lira, M. ; Rivera-Alvarez, Z. ; Hernandez-Calderon, I.
Author_Institution :
Dept. de Fisica, Centro de Investigacion y de Estudios Avanzados, IPN, Mexico City, Mexico
Abstract :
Using ZnCl2 as a doping source, we have grown epitaxial layers of Cl-doped ZnSe onto GaAs substrates by molecular beam epitaxy (MBE). The maximum carrier concentration obtained was 1.2 1019 cm-3. An increase in the deep level emission was observed in the photoluminescence (PL) spectra of highly doped samples. By deep level transient spectroscopy (DLTS) measurements four electron traps with energy levels of Ec=0.50, 0.68, 0.74 and 1.20 eV were detected
Keywords :
II-VI semiconductors; III-V semiconductors; carrier density; chlorine; deep level transient spectroscopy; gallium arsenide; molecular beam epitaxial growth; photoluminescence; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; zinc compounds; 0.5 eV; 0.68 eV; 0.74 eV; 1.20 eV; GaAs; MBE; ZnCl2; ZnSe:Cl-GaAs; deep level emission; deep level transient spectroscopy; doping source; electrical properties; electron traps measurement; energy levels; epitaxial layers; maximum carrier concentration; molecular beam epitaxy; optical properties; photoluminescence spectra; substrates; Doping; Electron traps; Energy measurement; Epitaxial layers; Gallium arsenide; Molecular beam epitaxial growth; Photoluminescence; Spectroscopy; Substrates; Zinc compounds;
Conference_Titel :
Microwave and Optoelectronics Conference, 1995. Proceedings., 1995 SBMO/IEEE MTT-S International
Conference_Location :
Rio de Janeiro
Print_ISBN :
0-7803-2674-1
DOI :
10.1109/SBMOMO.1995.509661
