The design of high-precision BiCOMS bandgap voltage reference

Author

Keyong, Hu ; Yuhuai, Wang ; Huixi, Zhang ; Meifei, Wu

Author_Institution

Qianjiang Coll., Hangzhou Normal Univ., Hangzhou, China

fYear

2011

fDate

9-11 Sept. 2011

Firstpage

537

Lastpage

539

Abstract

The bandgap reference circuit is suited for on-chip voltage down converters. The proposed BGR is designed and fabricated by 0.8 μ m BiCMOS technology. The occupied silicon area is only 400μm × 220 μ m. The little temperature coefficient is generated by adjusting the proportion of the resistance network, the output voltage changes only 2mV when the temperature sweeps from 30 to 150°C. The output voltage is independent of the source voltage and will be stable when the supply voltage is higher than 2.7V. The output is flat over a wide range of the supply voltage from 2.7 to 6V with a drift of only 4mV.

Keywords

BiCMOS integrated circuits; convertors; electric resistance; integrated circuit design; BGR design; high-precision BiCOMS bandgap voltage reference circuit design; on-chip voltage down converter; output voltage; resistance network; size 0.8 mum; source voltage; supply voltage; temperature coefficient; voltage 2.7 V to 6 V; BiCMOS integrated circuits; Bipolar transistors; Photonic band gap; Resistance; Temperature distribution; Transistors; BiCMOS; bandgap reference; temperature coefficient;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Communications and Control (ICECC), 2011 International Conference on

Conference_Location

Zhejiang

Print_ISBN

978-1-4577-0320-1

Type

conf

DOI

10.1109/ICECC.2011.6067841

Filename

6067841