DocumentCode
2198630
Title
Modeling of RF coupling on SSC silicon microstrip detector
Author
Chao, F.-L.
Author_Institution
Ind. Technol. Res. Inst., Hsinchu
fYear
1993
fDate
9-13 Aug 1993
Firstpage
431
Lastpage
433
Abstract
The silicon microstrip detectors are important parts of the Superconducting Supercollider program. SPICE simulation indicates that the pulse shape on the detector is distorted by the resistance of the thin strip. The RF coupling from the external field was calculated by the method of moments. Simulation results showed that the induced voltage increased proportionally to the frequency. The induced voltage on a high-resistance line became lower at a higher frequency than that of a low-resistance line
Keywords
electromagnetic induction; elemental semiconductors; method of moments; silicon; superconducting microwave devices; superconducting particle detectors; RF coupling; SPICE simulation; Si; Superconducting Supercollider program; external field; frequency; high-resistance line; induced voltage; low-resistance line; method of moments; pulse shape; quasi-static behavior; resistance; silicon microstrip detector; simulation results; Detectors; Microstrip components; Moment methods; Pulse shaping methods; Radio frequency; SPICE; Shape; Silicon; Strips; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electromagnetic Compatibility, 1993. Symposium Record., 1993 IEEE International Symposium on
Conference_Location
Dallas, TX
Print_ISBN
0-7803-1304-6
Type
conf
DOI
10.1109/ISEMC.1993.473695
Filename
473695
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