Sub-100 ps silicon bipolar ECL circuit operation at liquid nitrogen temperatures

Author

Cressler, John D. ; Chen, Tze-Chiang ; Warnock, James D. ; Tang, Denny D.

Author_Institution

IBM Thomas J Watson Res. Center, Yorktown Heights, NY, USA

fYear

1989

fDate

18-19 Sep 1989

Firstpage

156

Lastpage

159

Abstract

A two-dimensional device simulator is used to examine the various low-temperature profile design strategies for silicon bipolar transistors. It is found that a relaxed scaling approach offers the best overall results for high speed circuit operation at liquid nitrogen (LN ₂) temperatures. To support these calculations, experimental results which demonstrate that sub-100-ps emitter-coupled-logic circuit (ECL) operation at LN₂ temperature is achievable are reported. Design tradeoffs are discussed on the basis of the experimental results

Keywords

bipolar integrated circuits; bipolar transistors; elemental semiconductors; emitter-coupled logic; integrated logic circuits; semiconductor device models; silicon; 100 ps; 77 K; ECL circuit operation; LN₂ temperature; Si transistors; design tradeoffs; emitter-coupled-logic circuit; experimental results; high speed circuit operation; liquid N₂ temperatures; liquid nitrogen temperatures; low-temperature profile design strategies; relaxed scaling approach; two-dimensional device simulator; CMOS technology; Circuit simulation; Current density; Doping profiles; Nitrogen; Performance gain; Silicon; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar Circuits and Technology Meeting, 1989., Proceedings of the 1989

Conference_Location

Minneapolis, MN

Type

conf

DOI

10.1109/BIPOL.1989.69481

Filename

69481