DocumentCode
2199858
Title
Post-irradiation effects in a rad-hard technology
Author
Chabrerie, Christian ; Musseau, Olivier ; Flament, Olivier ; Leray, Jean-Luc ; Boudenot, Jean-Claude ; Shipman, Benoît ; Callewaert, Hervé
Author_Institution
CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France
fYear
1995
fDate
18-22 Sep 1995
Firstpage
120
Lastpage
124
Abstract
We studied radiation and post-irradiation effects in a CMOS rad-hard technology. The physical properties of charge detrapping in the gate oxide, investigated by isothermal and isochronal annealings, are dependent on the experimental procedure (bias, time storage, temperature, dose level)
Keywords
CMOS integrated circuits; annealing; integrated circuit measurement; radiation hardening (electronics); CMOS; charge detrapping; dose level; gate oxide; isochronal annealing; isothermal annealing; post-irradiation effects; rad-hard technology; time storage; Annealing; CMOS technology; Degradation; Isothermal processes; Radiation hardening; Silicon on insulator technology; Space technology; Temperature dependence; Testing; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
Conference_Location
Arcachon
Print_ISBN
0-7803-3093-5
Type
conf
DOI
10.1109/RADECS.1995.509763
Filename
509763
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