Modelling CMOS radiation tolerance in the high-dose range

Author

Holmes-Siedle, Andrew ; Christensen, Palle ; Adams, Leonard ; Seifert, Claudia-Christina

Author_Institution

Centre for Radiat. Damage Studies, Brunel Univ. of West London, UK

fYear

1995

fDate

18-22 Sep 1995

Firstpage

183

Lastpage

190

Abstract

This paper refines a “four-lane” physical model for CMOS devices, first published in 1994. The growth of threshold voltage as a function of radiation dose in a very wide range of Complementary Metal-Oxide-Semiconductor (CMOS) devices, all the way from low (kilorad) to very high (gigarad) doses. The parameters of four LANE-LIKE OR CORRIDOR-LIKE REGIONS on the growth curve diagram are extracted. The resulting FOUR-LANE CLASSIFICATION is useful in selecting CMOS technologies and offers a new terminology for describing the radiation tolerance of ICs and could form the basis of a “league table”, used to assess the performance of “hardening laboratories” around the world

Keywords

CMOS integrated circuits; integrated circuit modelling; radiation hardening (electronics); CMOS device; IC; corridor-like region; four-lane model; growth curve; hardening; high-dose range; lane-like region; radiation tolerance; threshold voltage; Annealing; CMOS technology; Circuit testing; Logic testing; MOS devices; Predictive models; Radiation hardening; Semiconductor device modeling; Terminology; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on

Conference_Location

Arcachon

Print_ISBN

0-7803-3093-5

Type

conf

DOI

10.1109/RADECS.1995.509775

Filename

509775