DocumentCode
2200153
Title
Fast techniques for MOSFET response prediction in space environments
Author
Pershenkov, V.S. ; Belyakov, V.V. ; Popov, M.Y. ; Cherepko, S.V. ; Shvetzov-Shilovsky, I.N.
Author_Institution
Moscow Eng. Phys. Inst., Russia
fYear
1995
fDate
18-22 Sep 1995
Firstpage
191
Lastpage
198
Abstract
The theoretical and practical aspects of two techniques for low dose rate effects investigations in MOS circuits are discussed. The first technique is based on the use of linear response theory together with the conversion model of interface states formation. The cornerstone of the second technique is the radiation induced charge neutralization phenomenon under negative oxide electric field. The application of test techniques for circuit simulation and the extraction of SPICE model parameters is also discussed
Keywords
MOSFET; SPICE; interface states; semiconductor device models; space vehicle electronics; MOSFET; SPICE; circuit simulation; conversion model; interface states; ionizing radiation; linear response theory; oxide electric field; radiation induced charge neutralization; space environment; Annealing; Circuit testing; Electron emission; Electron traps; Interface states; Laboratories; MOS devices; MOSFET circuits; Manufacturing; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
Conference_Location
Arcachon
Print_ISBN
0-7803-3093-5
Type
conf
DOI
10.1109/RADECS.1995.509776
Filename
509776
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