DocumentCode
2200255
Title
Radiation induced degradation in power MOSFETs
Author
Bendada, E. ; de la Bardonnie, M. ; Mialhe, P. ; Charles, J.-P. ; Blampain, E. ; Hoffmann, A.
Author_Institution
Centre d´´Etudes Fondamentals, Perpignan Univ., France
fYear
1995
fDate
18-22 Sep 1995
Firstpage
218
Lastpage
222
Abstract
An innovative method for device characterization is experimented to determine the radiation response of power MOSFETs. The degradation of body-drain junction parameters by ionizing radiation depends on the total energy to which the material has been subjected
Keywords
gamma-ray effects; power MOSFET; HEXFET; body-drain junction parameters; degradation; ionizing radiation response; power MOSFET; total energy; Business; Degradation; Diodes; Gold; MOSFET circuits; Optical polarization; Radiative recombination; Rectifiers; Resumes; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
Conference_Location
Arcachon
Print_ISBN
0-7803-3093-5
Type
conf
DOI
10.1109/RADECS.1995.509780
Filename
509780
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