DocumentCode
2200301
Title
The use of charge-pumping for characterizing irradiated power MOSFETs
Author
Prevost, Gwenael ; Augier, Pascal ; Palau, Jean-Marie
Author_Institution
Div. Radiocommun., Thomson-CSF, Gennevilliers, France
fYear
1995
fDate
18-22 Sep 1995
Firstpage
230
Lastpage
236
Abstract
A charge-pumping technique is proposed for characterizing radiation-induced interface traps in vertical power MOSFETs. An original setup allowing measurements on these 3-contact devices is presented. The first experimental results before and after irradiation are discussed
Keywords
X-ray effects; interface states; power MOSFET; X-ray irradiation; charge-pumping; radiation-induced interface traps; semiconductor device irradiation; three-contact devices; vertical power MOSFETs; Charge pumps; Current measurement; Electron traps; Energy states; Interface states; Lattices; MOSFETs; Performance evaluation; Silicon; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
Conference_Location
Arcachon
Print_ISBN
0-7803-3093-5
Type
conf
DOI
10.1109/RADECS.1995.509782
Filename
509782
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