Title :
Worst case irradiation on MOS components: implication on CMOS4000B technology total dose testing
Author :
Gaudin, D. ; Boyer, J.M. ; Dayid, J.P. ; Vadrot, J.F.
Author_Institution :
SGS-Thomson Microelectron., Rennes, France
Abstract :
Electrical behaviour observation was performed on CMOS4000B technology transistors and devices during a Co60 irradiation. Radiation test method determination was based on oxide trapped charges and interface states evolution at different irradiation dose rates
Keywords :
CMOS integrated circuits; MOSFET; gamma-ray effects; integrated circuit testing; interface states; semiconductor device testing; space vehicle electronics; CMOS4000B technology; electrical behaviour observation; gamma ray effects; interface states evolution; irradiation dose rates; oxide trapped charges; radiation test method determination; space equipment; total dose testing; worst case irradiation; Annealing; CMOS technology; Computer aided software engineering; Interface states; Inverters; MOS devices; MOSFETs; Space technology; Testing; Threshold voltage;
Conference_Titel :
Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
Conference_Location :
Arcachon
Print_ISBN :
0-7803-3093-5
DOI :
10.1109/RADECS.1995.509783
