Avalanche multiplication process in InGaAsP/InP quantum well infrared photodetectors

Author

Sun, Lu ; Su, Binghua ; Lu, Lianggang ; Xue, Junwen ; Zhang, Dao Hua

Author_Institution

Sch. of Inf. Sci. & Technol., Beijing Inst. of Technol., Zhuhai, China

fYear

2011

fDate

9-11 Sept. 2011

Firstpage

1913

Lastpage

1916

Abstract

High quality InGaAsP/InP quantum well infrared photodetectors grown by solid source molecular beam epitaxy were investigated. The photocurrent spectra are asymmetrical under positive and negative bias; it is due to the asymmetrical quantum well structures. To explain the quantum efficiency larger than 100% when bias voltage is +2 V at 40 K, avalanche multiplication process due to impact ionization must be considered.

Keywords

III-V semiconductors; gallium arsenide; impact ionisation; indium compounds; infrared detectors; molecular beam epitaxial growth; photodetectors; quantum well devices; semiconductor quantum wells; InGaAsP-InP; avalanche multiplication process; impact ionization; photocurrent spectra; quantum well infrared photodetectors; solid source molecular beam epitaxy; temperature 40 K; voltage 2 V; Absorption; Impact ionization; Indium phosphide; Photoconductivity; Photodetectors; Quantum well devices; Stationary state; Quantum well infrared photodetector (QWIP); avalanche multiplication process; photocurrent;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Communications and Control (ICECC), 2011 International Conference on

Conference_Location

Zhejiang

Print_ISBN

978-1-4577-0320-1

Type

conf

DOI

10.1109/ICECC.2011.6067929

Filename

6067929