A new approach to the analysis of SEU and SEL data to obtain the sensitive volume thickness [ICs]

Author

Barak, J. ; Levinson, J. ; Akkerman, A. ; Hass, M. ; Victoria, M. ; Zentner, A. ; David, D. ; Even, O. ; Lifshitz, Y.

Author_Institution

Soreq Nucl. Res. Center, Yavne, Israel

fYear

1995

fDate

18-22 Sep 1995

Firstpage

321

Lastpage

325

Abstract

It is proposed to use short-range ions (along with long-range ions) to obtain the thickness of the sensitive volume, d, and the SEU (single event upset) and SEL (single event latchup) cross sections vs the energy deposited in this volume, σ_ion(ε). These σ_ion(ε) and d can be used for calculating the proton induced cross sections σ_p. A study of the HM65162 CMOS SRAM demonstrates this method. The calculated σ_p is in good agreement with the experimental σ_p

Keywords

CMOS memory circuits; SRAM chips; digital integrated circuits; ion beam effects; monolithic integrated circuits; HM65162 CMOS SRAM; SEL data analysis; SEU data analysis; long-range ions; proton induced cross sections; sensitive volume thickness; short-range ions; single event latchup; single event upset; Acceleration; Electrostatics; Energy exchange; Ion accelerators; Proton accelerators; Silicon; Single event upset; Testing; Thickness measurement; Volume measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on

Conference_Location

Arcachon

Print_ISBN

0-7803-3093-5

Type

conf

DOI

10.1109/RADECS.1995.509797

Filename

509797