• DocumentCode
    2201245
  • Title

    A study involving the design and the fabrication process on the SRAM behaviour during a dose-rate event

  • Author

    Marec, Ronan ; Mary, Patrick ; Gaillard, Rémi ; Palau, Jean-Marie ; Bruguier, Guy ; Gasiot, Jean

  • Author_Institution
    NUCLETUDES S.A., Les Ulis, France
  • fYear
    1995
  • fDate
    18-22 Sep 1995
  • Firstpage
    453
  • Lastpage
    459
  • Abstract
    The experimental results analysis of TS4T1601 SRAMs in standby mode and electrical simulations show that the SRAM design and some slight mask misalignments during the fabrication process are dominant factors concerning the dose-rate upset patterns and thresholds
  • Keywords
    SRAM chips; X-ray effects; TS4T1601 SRAM; design; dose-rate event; electrical simulation; fabrication; mask misalignment; standby mode; threshold; upset pattern; Analytical models; Circuits; Fabrication; Pattern analysis; Random access memory; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
  • Conference_Location
    Arcachon
  • Print_ISBN
    0-7803-3093-5
  • Type

    conf

  • DOI
    10.1109/RADECS.1995.509819
  • Filename
    509819
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2201245