Avalanche semiconductor radiation detectors

Operation of novel avalanche semiconductor detector, produced on the basis of heterojunctions Si-SiC and Si-Si_xO_y is described. A uniform avalanche process with gain from 10³ to 10⁵ can be reached depending on the conductivity of SiC and Si_xO_y layers. Two types of avalanche photodetectors designed for applications in wavelength range 500-1000 nm with quantum efficiency 60±10% (650 nm) and 200-700 mm with quantum efficiency 60±15% (450 nm) are presented