Title :
Pt/SnO2 Nanowires/SiC Based Hydrogen Gas Sensor
Author :
Shafiei, M. ; Wlodarski, W. ; Kalantar-zadeh, K. ; Comini, E. ; Bianchi, S. ; Sberveglieri, G.
Author_Institution :
RMIT Univ., Melbourne
Abstract :
Pt/SnO2 nanowires/SiC based metal-oxide-semiconductor (MOS) devices were fabricated and tested for their gas sensitivity towards hydrogen. Tin oxide (SnO2) nanowires were grown on SiC substrates by the vapour liquid solid growth process. The material properties of the SnO2 nanowires such as its formation and dimensions were analyzed using scanning electron microscopy (SEM). The current-voltage (I-V) characteristics at different hydrogen concentrations are presented. The effective change in the barrier height for 0.06 and 1% hydrogen were found to be 20.78 and 131.59 meV, respectively. A voltage shift of 310 mV at 530degC for 1% hydrogen was measured.
Keywords :
MIS devices; electric properties; gas sensors; interface structure; nanowires; scanning electron microscopy; silicon compounds; tin compounds; vapour phase epitaxial growth; wide band gap semiconductors; MOS devices; Pt-SnO2-SiC; SEM; barrier height; current-voltage characteristics; dimension properties; formation properties; gas sensitivity; hydrogen gas sensor; material properties; scanning electron microscopy; vapour liquid solid growth process; voltage shift; Gas detectors; Gases; Hydrogen; Nanoparticles; Nanostructured materials; Nanowires; Semiconductor materials; Sensor phenomena and characterization; Silicon carbide; Temperature sensors;
Conference_Titel :
Sensors, 2007 IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-1261-7
Electronic_ISBN :
1930-0395
DOI :
10.1109/ICSENS.2007.4388362
