Title :
P-doping of zinc oxide using phosphorous oxide and thermal annealing
Author_Institution :
Dept. of Mater. Sci. & Eng., Kwangju Inst. of Sci. & Technol., Gwangju, South Korea
Abstract :
We have discussed p-doping of zinc oxide using phosphorus oxide and thermal annealing. P-ZnO thin films were successfully prepared by sputtering a ZnO target doped with P2O5 at high temperatures followed by a thermal annealing. ZnO thin films were grown on sapphire c-plane by radio-frequency sputtering. Carrier concentration of RTA treated ZnO thin films has been investigated.
Keywords :
II-VI semiconductors; carrier density; phosphorus; rapid thermal annealing; semiconductor doping; semiconductor thin films; sputtered coatings; zinc compounds; Al2O3; P-doping; RTA; ZnO thin films; ZnO:P; carrier concentration; phosphorous oxide; radiofrequency sputtering; sapphire; thermal annealing; Excitons; Materials science and technology; Optical films; Rapid thermal annealing; Rapid thermal processing; Semiconductor thin films; Sputtering; Temperature; Transistors; Zinc oxide;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239933
