Title :
Annealing temperature dependence of contact resistance and stability for Ti/Al/Pt/Au ohmic contacts to bulk n-ZnO
Author :
Ip, K. ; Baik, K.H. ; Heo, Y.W. ; Norton, D.P. ; Pearton, S.J. ; Laroche, J.R. ; Luo, B. ; Ren, F. ; Zavada, J.M.
Author_Institution :
Dept. of Mater. Sci. & Eng., Florida Univ., Gainesville, FL, USA
Abstract :
Summary form only given. The authors report on the annealing temperature dependence of contact resistance and morphology for Ti/Al/Pt/Au contacts on high-quality, undoped (n∼1017 cm-3) bulk ZnO substrates. Two different surface cleaning procedures were employed, although it was found that in general the as-received surface produced the lowest specific contact resistances.
Keywords :
II-VI semiconductors; aluminium; annealing; contact resistance; gold; ohmic contacts; platinum; semiconductor-metal boundaries; surface cleaning; surface morphology; titanium; zinc compounds; Ti-Al-Pt-Au-ZnO; Ti/Al/Pt/Au ohmic contacts; ZnO; annealing; bulk ZnO substrates; contact resistance; surface cleaning; surface morphology; Annealing; Contact resistance; Gold; Ohmic contacts; Stability; Surface cleaning; Surface morphology; Surface resistance; Temperature dependence; Zinc oxide;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239937