DocumentCode :
2205309
Title :
Methodology of parameter and coupling ratio extraction for source side injection (SSI) flash cell
Author :
Sim, Sang-Pil ; Kordesch, Al ; Lee, Ben ; Guo, Ping ; Liu, Chun-Mai ; Kwyro Lee ; Yang, Cary Y.
Author_Institution :
Microelectron. Lab., Santa Clara Univ., CA, USA
Volume :
1
fYear :
2001
fDate :
2001
Firstpage :
209
Abstract :
We present a new methodology to generate a two-transistor MACRO model of a SSI Flash cell based on a practical cell partitioning and a systematic and rigorous parameter extraction scheme. Through judicious use of TCAD simulation and precise measurement techniques, BSIM3 parameters of the individual transistors and coupling ratios of the cell were extracted, yielding a SPICE-compatible MACRO model for a three-poly split-gate Flash cell
Keywords :
SPICE; charge injection; flash memories; integrated circuit measurement; integrated circuit modelling; technology CAD (electronics); BSIM3 parameters; SPICE-compatible MACRO model; SSI Flash cell; TCAD simulation; cell partitioning; coupling ratio extraction; coupling ratios; flash cell; measurement techniques; parameter extraction; parameter extraction scheme; source side injection; three-poly split-gate Flash cell; two-transistor MACRO model; Capacitors; Circuit synthesis; Coupling circuits; Design optimization; Measurement techniques; Parameter extraction; Photography; Split gate flash memory cells; Transistors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
Type :
conf
DOI :
10.1109/ICSICT.2001.981457
Filename :
981457
Link To Document :
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