Title :
An embedded NORST flash memory technology
Author :
Liyang, Pan ; Kai, Liu ; Ying, Zeng ; Yinzi, Guo ; Jun, Zhu
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
A NORST (NOR flash memory with a select-transistor) flash memory cell technology, which features a single 5 V power supply, a small cell size of 14.88 um2 and a good reliability, is demonstrated suitable for the embedded application under 1 Mbit. It can work with byte erasing mode or sector erasing mode according to different embedded memory systems, and has a good reliability. An embedded memory system and its process technology, as well as the process result, is described
Keywords :
CMOS memory circuits; NOR circuits; flash memories; integrated circuit reliability; 1 Mbit; 5 V; NOR flash memory; byte erasing mode; embedded NORST flash memory technology; embedded application; embedded memory systems; process technology; reliability; sector erasing mode; select-transistor; CMOS process; CMOS technology; Channel hot electron injection; Flash memory; Flash memory cells; Logic arrays; Microelectronics; Nonvolatile memory; Threshold voltage; Tunneling;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981459
