DocumentCode :
2205370
Title :
Characterization and modeling of the anomalous dip in scattering parameter S11 of InGaP/GaAs HBTs
Author :
Lin, Yo-Sheng ; Liao, Kun-Nan ; Lu, Shey-Shi
Author_Institution :
Dept. of Electr. Eng., Nat. Chi-Nan Univ., Puli, Taiwan
fYear :
2003
fDate :
25-27 Aug. 2003
Firstpage :
209
Lastpage :
210
Abstract :
In this paper, characterization and modeling of the anomalous dip in S11 of InGaP/GaAs HBTs is reported and explained quantitatively for the first time.
Keywords :
III-V semiconductors; S-parameters; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor device models; InGaP-GaAs; InGaP/GaAs HBTs; anomalous dip; modeling; scattering parameter; Circuits; Electronics packaging; Equations; Fingers; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Impedance; Paper technology; Scattering parameters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
Type :
conf
DOI :
10.1109/ISCS.2003.1239979
Filename :
1239979
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2205370
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