Title :
Noise and linearity optimization in SiGe HBT RF technology
Author_Institution :
Alabama Microelectron. Sci. & Technol. Center, Auburn Univ., AL, USA
Abstract :
This paper reviews the fundamental noise and linearity characteristics of SiGe HBTs, and discusses SiGe profile design for improved device and circuit performance. The interaction between device physics and circuit performance is illustrated using a novel low-noise amplifier design
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; semiconductor device noise; SiGe; SiGe HBT RF technology; SiGe profile design; circuit performance; device performance; device physics; linearity optimization; low-noise amplifier design; noise; Circuit noise; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit noise; Linearity; Noise figure; Phase noise; Physics; Radio frequency; Silicon germanium;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981460
