Title :
InAs/GaInSb/AlGaAsSb based type-II W-lasers
Author :
Mermelstein, C. ; Schmitz, J. ; Kiefer, R. ; Walther, M. ; Wagner, J.
Author_Institution :
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany
Abstract :
In this paper, we study electrically pumped InAs/GaInSb/AlGaAsSb based type-II W-lasers were grown by solid-source on (100) GaSb:Te substrates, using valved cracker effusion cells for the supply of the group V elements. The active region, composed of typically 5 to 10 repetitions of the InAs/GaInSb/InAs W-building block separated by AlGaAsSb interperiod barriers, is surrounded by AlGaAsSb separate confinement layers forming the core of the optical waveguide with a total thickness of 1.3 μm.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; semiconductor lasers; waveguide lasers; (100) GaSb:Te substrates; 1.3 micron; AlGaAsSb interperiod barriers; GaSb:Te; InAs-GaInSb-AlGaAsSb; electrically pumped InAs/GaInSb/AlGaAsSb based type-II W-lasers; group V elements; optical waveguide; valved cracker effusion cells; Composite materials; Diode lasers; Molecular beam epitaxial growth; Optical materials; Optical waveguides; Quantum cascade lasers; Quantum well lasers; Semiconductor lasers; Temperature dependence; Threshold current;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239981
