DocumentCode :
2205574
Title :
Reliability of BCB passivated InAlAs/InGaAs HEMTs under thermal stress
Author :
Kim, D.H. ; Yoon, M.H. ; Kim, T.H. ; Yang, K.
Author_Institution :
EECS, KAIST
fYear :
2003
fDate :
25-27 Aug. 2003
Firstpage :
231
Lastpage :
232
Keywords :
HEMTs; Indium compounds; Indium gallium arsenide; MODFETs; Passivation; Polyimides; Testing; Thermal degradation; Thermal resistance; Thermal stresses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
Type :
conf
DOI :
10.1109/ISCS.2003.1239990
Filename :
1239990
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2205574
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