Title :
Novel ultra thin gate oxide growth technique by alternating current anodization
Author :
Hwu, Jenn-Gwo ; Lee, Chuang-Yuan ; Ting, Chieh-Chih ; Chen, Wei-Len
Author_Institution :
Graduate Inst. of Electron. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
Ultra-thin gate oxides prepared by the novel anodic oxidation technique of using direct-current (DC), alternating-current (AC), and direct-current with ac oscillation (DAC) as anodization voltages are studied. After suitable high temperature anneal in N2, these anodic oxides (ANO) show improved uniformity in electrical characteristics with respect to conventional rapid thermal oxides. Smaller leakage current and higher breakdown endurance are observed for these ANO oxides. Specially, DAC-ANO oxides present a further improved breakdown performance than the other oxides. Further, anodization is carried out with N-type Si (ANO-Si) replacing Pt as the cathode. ANO-Si oxides demonstrate even preferable reliability and superior electrical uniformity
Keywords :
annealing; anodisation; dielectric thin films; electric breakdown; leakage currents; oxidation; silicon compounds; ANO oxides; N-type Si; N2; Si-SiO2; ac oscillation; alternating current anodization; alternating-current; anodic oxidation; anodic oxides; anodization voltages; breakdown endurance; direct-current; electrical characteristics; electrical uniformity; high temperature anneal; leakage current; ultra thin gate oxide growth technique; Aluminum; Cathodes; Electrodes; MOS capacitors; Oxidation; Platinum; Silicon; Substrates; Temperature distribution; Voltage;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981483
