Title :
Modeling of IGBT resistive and inductive turn-on behavior
Author :
Lu, L. ; Pytel, S.G. ; Santi, E. ; Bryant, A.T. ; Hudgins, J.L. ; Palmer, P.R.
Author_Institution :
Dept. of Electr. Eng., South Carolina Univ., Columbia, SC, USA
Abstract :
Although IGBT turn on losses can be comparable to turn off losses, IGBT turn on has not been as thoroughly studied in the literature. In the present work IGBT turn on under resistive and inductive load conditions is studied in detail through experiments, finite element simulations, and circuit simulations using physics-based semiconductor models. Under resistive load conditions, it is critical to accurately model the conductivity modulation phenomenon. Under clamped inductive load conditions at turn-on there is strong interaction between the IGBT and the freewheeling diode undergoing reverse recovery. Physics-based IGBT and diode models are used that have been proved accurate in the simulation of IGBT turn-off.
Keywords :
circuit simulation; diodes; finite element analysis; insulated gate bipolar transistors; losses; semiconductor device models; IGBT modeling; circuit simulation; conductivity modulation phenomenon; finite element simulation; freewheeling diode; inductive load; physics-based semiconductor model; resistive load; reverse recovery; turn-on behavior; Circuit simulation; Conductivity; Equations; Finite element methods; Insulated gate bipolar transistors; Manufacturing; Semiconductor diodes; Stress; Switching converters; Tail;
Conference_Titel :
Industry Applications Conference, 2005. Fourtieth IAS Annual Meeting. Conference Record of the 2005
Print_ISBN :
0-7803-9208-6
DOI :
10.1109/IAS.2005.1518833