DocumentCode
2206392
Title
Studies on size effect of copper interconnect lines
Author
Wu, Wen ; Maex, Karen
Author_Institution
IMEC, Leuven, Belgium
Volume
1
fYear
2001
fDate
2001
Firstpage
416
Abstract
In this paper, we present our studies on size effect of copper interconnect lines as well as PVD copper films. It was found that both the size effect and grain boundary scattering play all important role in determining the total resistivity values of copper lines and films. Fitting processes were carried out which gave simultaneously an estimation of the extent of size effect and grain boundary scattering
Keywords
copper; electrical resistivity; grain boundaries; integrated circuit interconnections; metallic thin films; plasma CVD coatings; size effect; Cu; Cu interconnect lines; PVD Cu films; fitting processes; grain boundary scattering; resistivity values; size effect; Atherosclerosis; Conductivity; Contact resistance; Copper; Electrons; Grain boundaries; Integrated circuit interconnections; Optical films; Reflection; Scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location
Shanghai
Print_ISBN
0-7803-6520-8
Type
conf
DOI
10.1109/ICSICT.2001.981507
Filename
981507
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