Title :
Electrical Properties of HfO2 Films Formed by Ion Assisted Deposition
Author :
Cherkaoui, K. ; Negara, A. ; McDonnell, S. ; Hughes, G. ; Modreanu, M. ; Hurley, P.K.
Author_Institution :
Tyndall Nat. Inst., Univ. Coll. Cork
Abstract :
In this paper, the electrical and structural analysis of HfO2 thin films formed by ion assisted deposition are reported. The electrical results show excellent layer uniformity and very good reproducibility before post deposition annealing. The influence of the oxygen flow during the growth upon the electrical properties of the film has also been investigated. Forming gas annealing removed the hysteresis observed in the capacitance measurements. However, the electrical results and TEM measurements show the presence of an important SiO2 interfacial layer
Keywords :
annealing; dielectric thin films; electric properties; hafnium compounds; ion beam assisted deposition; silicon compounds; HfO2; SiO2; TEM measurements; electrical analysis; electrical properties; gas annealing; interfacial layer; ion assisted deposition; oxygen flow; post deposition annealing; structural analysis; thin films; Annealing; Argon; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Hysteresis; MOS capacitors; Optical films; Semiconductor films; Substrates;
Conference_Titel :
Microelectronics, 2006 25th International Conference on
Conference_Location :
Belgrade
Print_ISBN :
1-4244-0117-8
DOI :
10.1109/ICMEL.2006.1650972
