Title :
Current transport mechanisms of Ge1-yCy/Si heterojunction diodes
Author :
Chen, F. ; Kolodzey, James
Author_Institution :
IBM Microelectron., Essex Junction, VT, USA
Abstract :
Alloys of group IV semiconductors have attracted more and more attention recently as a material for use in the development of Si-based heterostructure devices. In this paper, the current transport mechanisms of relaxed p-type Ge1-yCy alloy films on n-type Si at both forward and reverse bias were studied. The current transport is dominated by combined thermal injection, defect tunneling, and recombination mechanisms. The presence of carbon reduces interface states, decreases the leakage current, and increases forward turn-on voltage. This paper demonstrates the benefits of alloying C into Ge and the promising characteristics of Ge1-yCy/Si heterostructure devices for future electronic and optoelectronic applications
Keywords :
electron-hole recombination; elemental semiconductors; germanium alloys; interface states; leakage currents; semiconductor diodes; semiconductor heterojunctions; semiconductor materials; silicon; tunnelling; Ge1-yCy-Si; Ge1-yCy/Si heterojunction diodes; combined thermal injection; current transport mechanisms; defect tunneling; forward bias; leakage current; recombination mechanisms; reverse bias; turn-on voltage; Alloying; Germanium alloys; Interface states; Leakage current; Radiative recombination; Semiconductor films; Semiconductor materials; Silicon alloys; Tunneling; Voltage;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981548
