DocumentCode
2207645
Title
High power and high cutoff frequencies of SiGe HBT
Author
Wenfu, Dong
Author_Institution
Microelectron. R&D Center, Acad. Sinica, Beijing, China
Volume
1
fYear
2001
fDate
2001
Firstpage
610
Abstract
Si/SiGe heterojunction bipolar transistors (HBT´s) have been fabricated by growing the complete layer structure with high vacuum CVD. The main device process is shown in this paper. Experimental results show that the device output power reached 0.5 watts and the cutoff frequency reached 18 GHz. The devices are propitious to high power and high frequency RF circuits
Keywords
CVD coatings; Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; silicon; vacuum deposited coatings; vapour phase epitaxial growth; 0.5 W; 18 GHz; Si-SiGe; Si/SiGe heterojunction bipolar transistors; SiGe HBT; complete layer structure; device output power; high cutoff frequencies; high power; high vacuum CVD; Bipolar transistors; Circuits; Cutoff frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Microelectronics; Power generation; Radio frequency; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location
Shanghai
Print_ISBN
0-7803-6520-8
Type
conf
DOI
10.1109/ICSICT.2001.981553
Filename
981553
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