DocumentCode :
2207810
Title :
High injection region analysis and optimization of power transistors
Author :
Kotowski, T.W.
Author_Institution :
GMC, Kokomo, Indiana 46901
fYear :
1977
fDate :
14-16 June 1977
Firstpage :
27
Lastpage :
34
Abstract :
A model of base widening and the associated inverse mode base conductivity modulation is proposed. Expressions are obtained for saturated current gain (hFE) and cutoff frequency (fT) in double-diffused transistors for exponential, Gaussian, and erfc base impurity profiles. A convenient method for calculation of optimum transistor design variables is also given.
Keywords :
Conductivity; Current density; Cutoff frequency; Equations; Impurities; Modulation; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics Specialists Conference, 1977 IEEE
Conference_Location :
Palo Alto, CA, USA
ISSN :
0275-9306
Type :
conf
DOI :
10.1109/PESC.1977.7070800
Filename :
7070800
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2207810
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