Title :
Effects of NO Annealing on the Characteristics of GaN MIS Capacitor
Author :
Lin, Limin ; Lai, P.T. ; Lau, Kei May
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ.
Abstract :
An ultra-thin thermally-grown GaOxNy was formed between deposited SiO2 dielectric and GaN wafer to improve the interface quality. The interface-trap density at 0.4 eV below the conduction-band edge was reduced by one order compared with that of a sample without the stacked GaOxNy. NO annealing was conducted on both SiO2/ GaN and SiO2/GaOxNy/GaN MIS structures, and turned out to effectively suppress the oxide charges. The sample with stacked GaOxNyannealed in NO achieved the lowest oxide-charge density (Qox) of 1.7times1011cm2 eV-1; Qox of the one without stacked GaOxNy annealed in NO was 9.5 times1011cm2 eV-1; those samples not annealed in NO got high Qox of 8times1012 cm2 eV-1, with or without stacked GaOx Ny. Moreover, NO annealing was found to effectively reduce border traps. The interface quality was improved on both the sample with the GaOxNy interlayer annealed in nitrogen and the non-stacked sample annealed in NO. The breakdown field and leakage current of the gate dielectrics were also compared in this work
Keywords :
III-V semiconductors; MIS capacitors; chemical vapour deposition; thin film capacitors; 0.4 eV; GaN; GaOxNy; MIS capacitor; NO; NO annealing; SiO2; border trap reduction; breakdown field; interface quality improvement; interface-trap density; interlayer annealing; leakage current; oxide-charge density; surface quality improvement; Annealing; Capacitors; Degradation; Dielectric breakdown; Dielectric materials; Electric breakdown; Gallium nitride; Leakage current; Nitrogen; Temperature;
Conference_Titel :
Microelectronics, 2006 25th International Conference on
Conference_Location :
Belgrade
Print_ISBN :
1-4244-0117-8
DOI :
10.1109/ICMEL.2006.1651018
