Characterization of lateral asymmetric channel (LAC) thin film SOI MOSFETs

Author

Najeeb-ud-Din ; Dunga, M.V. ; Kumar, Aatish ; Rao, Ramgopal V. ; Vasi, Juzer

Author_Institution

Dept. of Electr. Eng., Indian Inst. of Technol., Mumbai, India

Volume

1

fYear

2001

fDate

2001

Firstpage

655

Abstract

This paper presents results on the characterization of Lateral Asymmetric Channel (LAC) thin film silicon-on-insulator (SOI) MOSFETs. These devices are compared with conventional SOI MOSFETs having uniform channel doping. The measurements have been taken for a number of channel lengths, silicon film thicknesses, and tilt angles of implantation. The aspects studied include threshold voltage roll-off, kink effect, gate induced drain leakage (GIDL) and parasitic bipolar transistor action. Measurements have been supplemented by device simulations. The LAC devices show excellent characteristics, with many advantages over the conventional devices

Keywords

MOSFET; leakage currents; silicon-on-insulator; Si-SiO; channel lengths; film thicknesses; gate induced drain leakage; kink effect; lateral asymmetric channel; parasitic bipolar transistor; thin film SOI MOSFETs; threshold voltage roll-off; tilt angles; Doping; Length measurement; Los Angeles Council; MOSFETs; Semiconductor films; Semiconductor thin films; Silicon on insulator technology; Thickness measurement; Threshold voltage; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Conference_Location

Shanghai

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.981564

Filename

981564