Title :
Physics and Electrical Characterization of Excimer Laser Crystallized Polysilicon TFTs
Author :
Michalas, L. ; Exarchos, M.A. ; Papaioannou, G.J. ; Kouvatsos, D.N. ; Voutsas, A.T.
Author_Institution :
Dept. of Phys., Nat. & Kapodistrian Univ. of Athens
Abstract :
The electrical properties of polycrystalline silicon thin film transistors are investigated. Transfer and transient characteristics have been recorded versus temperature, in the linear operation regime. Basic parameters such as subthreshold swing, leakage current and drain current overshoot transient are found to stem from the same deep states thermally activated carrier generation mechanism
Keywords :
excimer lasers; semiconductor device manufacture; silicon; thin film transistors; Si; drain current; electrical characterization; excimer laser crystallized polysilicon TFT; leakage current; physics characterization; polycrystalline silicon thin film transistors; subthreshold swing; Crystallization; Laser sintering; Laser theory; Leakage current; Material properties; Physics; Silicon; Temperature dependence; Thin film transistors; Threshold voltage;
Conference_Titel :
Microelectronics, 2006 25th International Conference on
Conference_Location :
Belgrade
Print_ISBN :
1-4244-0117-8
DOI :
10.1109/ICMEL.2006.1651027
