DocumentCode
2209158
Title
The application of power MOSFETs at 10MHz
Author
Goldberg, Andrew F. ; Kassakian, John G.
Author_Institution
Laboratory for Electromagnetic and Electronic Systems, Massachusetts Institute of Technology, Cambridge, United States of America
fYear
1985
fDate
24-28 June 1985
Firstpage
91
Lastpage
100
Abstract
The design and performance of a 10MHz dc/dc converter is discussed. The behavior of the power MOSFET at this frequency, and the integration of device parasitics into the circuit are described. The performance of a 50W converter is compared with the predictions of a detailed simulation. Losses are analysed and shown to be dominated by MOSFET switching.
Keywords
Capacitance; Capacitors; Energy storage; Integrated circuit modeling; Logic gates; MOSFET; Schottky diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1985 IEEE
Conference_Location
Toulouse, France
ISSN
0275-9306
Type
conf
DOI
10.1109/PESC.1985.7070933
Filename
7070933
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