Super self-aligned process technology (SST) and its applications

Author

Ichino, Haruhiko ; Suzuki, Masao ; Konaka, Shinsuke ; Wakimoto, Tsutomu ; Sakai, Tetsuhi

Author_Institution

LSI Lab., NTT, Kanagawa, Japan

fYear

1988

fDate

12-13 Sep 1988

Firstpage

15

Lastpage

18

Abstract

SST-1B technology, an advanced version of SST-1A, and its applications are described. The main feature is utilization of the selectively ion-implanted collector process to improve shallow base-collector profiles to reduce base width and intrinsic base resistance, and to suppress the base pushout effect. A cutoff frequency of 25.7 GHz and the basic gate delays of 20.5 ps for NTL and 34.1 ps for ECL have been obtained. Using this technology, a number of very high-speed ICs-a 18-GHz 1/8 divider, a 2-Gbsps 6-bit AD converter, and 43-ps/5.2-GHz macrocell array LSIs-have been developed. Concerning future performance, a cutoff frequency of more than 50 GHz for a scaled-down transistor is expected

Keywords

analogue-digital conversion; bipolar integrated circuits; cellular arrays; digital integrated circuits; emitter-coupled logic; frequency dividers; integrated circuit technology; large scale integration; 18 GHz; 20.5 ps; 25.7 GHz; 34.1 ps; 43 ps; 6 bit; A/D convertor; ECL; NTL; SST-1B technology; base pushout effect; base width; cutoff frequency; frequency divider; gate delays; intrinsic base resistance; macrocell array LSIs; selectively ion-implanted collector process; shallow base-collector profiles; super self-aligned process technology; very high-speed ICs; Capacitance; Current density; Cutoff frequency; Electrodes; High speed optical techniques; Laboratories; Large scale integration; Macrocell networks; Optical computing; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar Circuits and Technology Meeting, 1988., Proceedings of the 1988

Conference_Location

Minneapolis, MN

Type

conf

DOI

10.1109/BIPOL.1988.51034

Filename

51034