Title :
A compact 35-65 GHz up-conversion mixer with integrated broadband transformers in 0.18-/spl mu/m SiGe BiCMOS technology
Author :
Huang, Ping-Chen ; Liu, Ren-Chieh ; Tsai, Jeng-Han ; Chang, Hong-Yeh ; Wang, Huei ; Yeh, John ; Lee, Chwan-Ying ; Chern, John
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei
Abstract :
This paper presents a compact 35-65 GHz Gilbert cell up-convert mixer implemented in TSMC 0.18-mum SiGe BiCMOS technology. Integrated broadband transformers and meandered thin-film microstrip lines were utilized to achieve a miniature chip area of 0.6 mm times 0.45 mm. The compact MMIC has a flat measured conversion loss of 7 plusmn 1.5 dB and LO suppression of more than 40 dB at the RF port from 35 to 65 GHz. The power consumption is 14 mW from a 4-V supply. This is a fully integrated millimeter-wave active mixer that has the smallest chip area ever reported, and also the highest operation frequency among up-conversion mixers using silicon-based technology
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; bipolar MIMIC; high-frequency transformers; microstrip lines; millimetre wave mixers; 0.18 micron; 0.45 mm; 0.6 mm; 14 mW; 35 to 65 GHz; 4 V; 7 dB; BiCMOS technology; Gilbert cell; SiGe; compact MMIC; integrated broadband transformers; millimeter-wave active mixer; silicon-based technology; thin-film microstrip lines; up-conversion mixer; BiCMOS integrated circuits; Germanium silicon alloys; Loss measurement; MMICs; Microstrip; Radio frequency; Semiconductor device measurement; Silicon germanium; Transformers; Transistors;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-9572-7
DOI :
10.1109/RFIC.2006.1651129
