High-Q Photonic Crystal Nanocavities on 300 mm SOI Substrate Fabricated With 193 nm Immersion Lithography

Author

Weiqiang Xie ; Fiers, Martin ; Selvaraja, Shankar ; Bienstman, Peter ; Van Campenhout, J. ; Absil, P. ; Van Thourhout, Dries

Author_Institution

INTEC Dept., IMEC, Ghent Univ., Ghent, Belgium

Volume

32

Issue

8

fYear

2014

fDate

15-Apr-14

Firstpage

1457

Lastpage

1462

Abstract

On-chip 1-D photonic crystal nanocavities were designed and fabricated in a 300 mm silicon-on-insulator wafer using a CMOS-compatible process with 193 nm immersion lithography and silicon oxide planarization. High quality factors up to 10⁵ were achieved. By changing geometrical parameters of the cavities, we also demonstrated a wide range of wavelength tunability for the cavity mode, a low insertion loss and excellent agreement with simulation results. These on-chip nanocavities with high quality factors and low modal volume, fabricated through a high-resolution and high-volume CMOS compatible platform open up new opportunities for the photonic integration community.

Keywords

CMOS integrated circuits; Q-factor; immersion lithography; integrated optics; nanolithography; nanophotonics; optical fabrication; optical resonators; optical tuning; photonic crystals; planarisation; silicon-on-insulator; substrates; CMOS-compatible process; SOI substrate; Si; cavity mode; geometrical parameters; high-Q photonic crystal nanocavities; immersion lithography; insertion loss; modal volume; on-chip 1-D photonic crystal nanocavities; photonic integration; quality factors; silicon oxide planarization; silicon-on-insulator wafer; size 300 mm; wavelength 193 nm; wavelength tunability; Cavity resonators; Fabrication; Insertion loss; Mirrors; Photonics; Silicon; Wavelength measurement; CMOS; nanocavities; photonic crystal (PhC); silicon-on-insulator (SOI);

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/JLT.2014.2308061

Filename

6747322