DocumentCode
2210558
Title
Integration of MEMS Actuators with Magnetic Tunnel Junction Sensors
Author
Jaramillo, Gerardo Martinez ; Chan, Mei-Lin ; Horsley, David A.
Author_Institution
Univ. of California, Davis
fYear
2007
fDate
28-31 Oct. 2007
Firstpage
1380
Lastpage
1383
Abstract
We are developing techniques to integrate magnetic tunnel junction (MTJ) sensors with MEMS actuators for magnetic scanning-probe microscopy applications. In this application, the MTJ sensor is raster-scanned over a specimen and spatial variations in the magnetic field are recorded. We have developed a fabrication process where the MTJ sensor is fabricated first on the surface of an SOI wafer. Subsequently, MEMS actuators are fabricated in a two step deep reactive ion etching process. We have carried out electromechanical testing of the actuator voltage-to-position and frequency response. MEMS actuators are uniquely suited to achieve both precise, micron-scale control of the average sample-to-sensor separation and to AC modulate the separation and MTJ signal at a very high frequency (>10 kHz).
Keywords
magnetic sensors; magnetic tunnelling; microactuators; sputter etching; MEMS actuators; SOI wafer; actuator voltage-to-position; deep reactive ion etching process; electromechanical testing; frequency response; magnetic field; magnetic scanning-probe microscopy; magnetic tunnel junction sensors; micron-scale control; sample-to-sensor separation; Actuators; Electromechanical sensors; Etching; Fabrication; Magnetic force microscopy; Magnetic sensors; Magnetic separation; Magnetic tunneling; Micromechanical devices; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2007 IEEE
Conference_Location
Atlanta, GA
ISSN
1930-0395
Print_ISBN
978-1-4244-1261-7
Electronic_ISBN
1930-0395
Type
conf
DOI
10.1109/ICSENS.2007.4388669
Filename
4388669
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