• DocumentCode
    2210558
  • Title

    Integration of MEMS Actuators with Magnetic Tunnel Junction Sensors

  • Author

    Jaramillo, Gerardo Martinez ; Chan, Mei-Lin ; Horsley, David A.

  • Author_Institution
    Univ. of California, Davis
  • fYear
    2007
  • fDate
    28-31 Oct. 2007
  • Firstpage
    1380
  • Lastpage
    1383
  • Abstract
    We are developing techniques to integrate magnetic tunnel junction (MTJ) sensors with MEMS actuators for magnetic scanning-probe microscopy applications. In this application, the MTJ sensor is raster-scanned over a specimen and spatial variations in the magnetic field are recorded. We have developed a fabrication process where the MTJ sensor is fabricated first on the surface of an SOI wafer. Subsequently, MEMS actuators are fabricated in a two step deep reactive ion etching process. We have carried out electromechanical testing of the actuator voltage-to-position and frequency response. MEMS actuators are uniquely suited to achieve both precise, micron-scale control of the average sample-to-sensor separation and to AC modulate the separation and MTJ signal at a very high frequency (>10 kHz).
  • Keywords
    magnetic sensors; magnetic tunnelling; microactuators; sputter etching; MEMS actuators; SOI wafer; actuator voltage-to-position; deep reactive ion etching process; electromechanical testing; frequency response; magnetic field; magnetic scanning-probe microscopy; magnetic tunnel junction sensors; micron-scale control; sample-to-sensor separation; Actuators; Electromechanical sensors; Etching; Fabrication; Magnetic force microscopy; Magnetic sensors; Magnetic separation; Magnetic tunneling; Micromechanical devices; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Sensors, 2007 IEEE
  • Conference_Location
    Atlanta, GA
  • ISSN
    1930-0395
  • Print_ISBN
    978-1-4244-1261-7
  • Electronic_ISBN
    1930-0395
  • Type

    conf

  • DOI
    10.1109/ICSENS.2007.4388669
  • Filename
    4388669