Title :
Emitter and base fabrication in advanced bipolar transistors using gas immersion laser doping
Author :
Weiner, Kurt H. ; Sigmon, T.W.
Author_Institution :
Lawrence Livermore Nat. Lab., Livermore, CA, USA
Abstract :
Gas immersion laser doping (GILD) is presented as a promising new method to fabricate base and emitter regions of precise depth in advanced bipolar transistors. Two additional processes based on GILD technology are introduced: (1) ion implantation with laser redistribution, and (2) laser-induced recrystallization of deposited amorphous Si and Ge films. Transistors with 700-Å base width and maximum current gain of 100 are fabricated. Crystalline Si and Ge0.18Si0.82 layers are produced on Si<100> substrates using laser recrystallization. These laser-grown layers are suitable for device fabrication
Keywords :
bipolar transistors; ion implantation; laser beam applications; recrystallisation; semiconductor doping; GILD technology; Ge1.18Si0.82-Si; Si substrates; base fabrication; bipolar transistors; current gain; emitter regions; gas immersion laser doping; ion implantation; laser redistribution; laser-induced recrystallization; Annealing; Bipolar transistors; Doping; Gas lasers; Ion implantation; Laboratories; Optical device fabrication; Pulsed laser deposition; Silicon; Surface emitting lasers;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1988., Proceedings of the 1988
Conference_Location :
Minneapolis, MN
DOI :
10.1109/BIPOL.1988.51040
