High performance GOI MISFET with nickel germanide source/ drain using new graded Ge condensation method

We demonstrated for the first time a small size GOI (Germanium-on-insulator) MISFET with nickel germanide source/drain, thin high-k dielectric and metal gate electrode which is fabricated by a new graded Ge condensation method. We obtained two times higher electron mobility in GOI MISFET fabricated by this new graded Ge condensation method when compared with that in SOI MISFET. In addition, a very low leakage current of less than 1 nA and a very high on-current of 549 muA/mum at V_d=V_g=1.2 V were simultaneously obtained in a small size GOI MISFET with the gate length of 0.65 mum.