TFSOI complementary BiCMOS technology for low power RF mixed-mode applications

Author

Huang, W.M. ; Ngo, D. ; Babcock, Jeff ; Shin, H.C. ; Welch, P. ; Racanelli, M. ; Foerstner, J. ; Ford, J. ; Cheng, S.

Author_Institution

Adv. Custom Technol., Motorola Inc., Mesa, AZ, USA

fYear

1996

fDate

5-8 May 1996

Firstpage

35

Lastpage

38

Abstract

A Thin-Film-Silicon-On-Insulator Complementary BiCMOS technology has been developed for low power applications. The technology is based on a manufacturable, near-fully-depleted 0.5 μm CMOS process with the lateral bipolar device integrated as a drop-in module for CBiCMOS circuits. Excellent low power performance is demonstrated through low current ECL and low voltage CMOS circuits. For the first time, good RF and analog performance of a TFSOI (C)BiCMOS technology is demonstrated. Device gain, noise figure, 1/F noise and matching characteristics comparable to bulk BiCMOS technologies are achieved

Keywords

BiCMOS integrated circuits; integrated circuit technology; mixed analogue-digital integrated circuits; silicon-on-insulator; 0.5 micron; RF mixed-mode applications; Si; complementary BiCMOS technology; lateral bipolar device; low current ECL; low power applications; low voltage CMOS circuits; thin film SOI technology; BiCMOS integrated circuits; CMOS process; CMOS technology; Capacitance; Dielectric substrates; Integrated circuit technology; MOS devices; Noise figure; Radio frequency; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 1996., Proceedings of the IEEE 1996

Conference_Location

San Diego, CA

Print_ISBN

0-7803-3117-6

Type

conf

DOI

10.1109/CICC.1996.510507

Filename

510507