• DocumentCode
    2213632
  • Title

    Thermoelectric properties of hole doped FeSb2

  • Author

    Bentien, A. ; Madsen, G.K.H. ; Johnsen, S. ; Iversen, B.B.

  • Author_Institution
    Dept. of Chem., Aarhus Univ., Denmark
  • fYear
    2005
  • fDate
    19-23 June 2005
  • Firstpage
    201
  • Lastpage
    203
  • Abstract
    FeSb2 is a diamagnetic semiconductor where the Fe 3d levels are located just below the band gap. A series of systematically Sn substituted FeSb2-xSnx samples with x = 0-0.15 has been synthesized and we explore the thermoelectric properties of these samples as the Fermi level is shifted down into the region of the Fe 3d levels.
  • Keywords
    Fermi level; chemical exchanges; diamagnetic materials; energy gap; iron compounds; magnetic semiconductors; semiconductor doping; thermoelectricity; tin; Fe 3d levels; FeSb2:Sn; Fermi level; Sn substitution; band gap; diamagnetic semiconductor; hole doped FeSb2; thermoelectric properties; Chemistry; Electrons; Inorganic materials; Iron; Lattices; Photonic band gap; Tellurium; Temperature; Thermoelectricity; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermoelectrics, 2005. ICT 2005. 24th International Conference on
  • ISSN
    1094-2734
  • Print_ISBN
    0-7803-9552-2
  • Type

    conf

  • DOI
    10.1109/ICT.2005.1519919
  • Filename
    1519919
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2213632