• DocumentCode
    2213697
  • Title

    Capacitance-voltage characteristics of MOS capacitors with Ge anaocrystals embedded in HfO2 gate material

  • Author

    Lee, Hey-Ryoung ; Choi, Samjong ; Cho, Kyoungah ; Sangsig Kim

  • Author_Institution
    Dept. of Electr. Eng. & Inst. for Nano Sci., Korea Univ., Seoul
  • Volume
    1
  • fYear
    2006
  • fDate
    22-25 Oct. 2006
  • Firstpage
    432
  • Lastpage
    433
  • Abstract
    Ge nanocrystals(NCs)-embedded MOS capacitors are characterized in this work using capacitance-voltage measurement. High-k dielectrics HfO2 are employed for the gate material in the MOS capacitors, and the C-V curves obtained from O2-and NH3-annealed HfO2 films are analyzed.
  • Keywords
    annealing; capacitance measurement; germanium; hafnium compounds; high-k dielectric thin films; voltage measurement; HfO2; HfO2 - Binary; MOS capacitors; annealing; capacitance voltage measurement; gate material; germanium nanocrystals; high k dielectrics; Capacitance-voltage characteristics; Hafnium oxide; MOS capacitors; Ge NCs; HfO2; nano-floating gate; nitridation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
  • Conference_Location
    Gyeongju
  • Print_ISBN
    978-1-4244-0540-4
  • Electronic_ISBN
    978-1-4244-0541-1
  • Type

    conf

  • DOI
    10.1109/NMDC.2006.4388802
  • Filename
    4388802
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2213697