Title :
A Chip-Scale Packaged Amplifier MMIC using Broadband Hot-Via Transitions
Author :
Bessemoulin, A. ; Gaessler, C. ; Marschall, P. ; Quentin, P.
Author_Institution :
Member, IEEE, United Monolithic Semiconductors S.A.S, Route Départementale 128 - BP46, F-91401 Orsay Cedex, France. email: alexandre.bessemoulin@ums-gaas.com - Ph. (+33) 1 69 33 05 46 - Fax. (+33) 1 69 33 05 52
Abstract :
The performance of RF hot-via transitions for use in chip-scale package (CSP) MMICs are presented. This is illustrated with the realization of a low noise amplifier MMIC using optimized hot-vias. Based on our standard 0.25-¿m GaAs low-noise PHEMT process, with BCB coating and backside metallization, this 2-stage low noise microstrip amplifier mounted with bumps on a carrier substrate achieved a linear gain of 15 dB over the 15-to 32 GHz frequency range. To the author-s knowledge, this is the first demonstration of chip-scale packaged active MMICs using hot-via transitions.
Keywords :
Broadband amplifiers; Chip scale packaging; Coatings; Gallium arsenide; Low-noise amplifiers; MMICs; Metallization; PHEMTs; Radio frequency; Radiofrequency amplifiers;
Conference_Titel :
Microwave Conference, 2003 33rd European
Conference_Location :
Munich, Germany
Print_ISBN :
1-58053-834-7
DOI :
10.1109/EUMA.2003.340947
