Probing electronic properties of quantum dots and molecules by nanogap metallic electrodes

Author

Hirakawa, K. ; Jung, Moongon ; Umeno, A. ; Machida, T. ; Akasaka, T. ; Hong, S.-H. ; Igarashi, Y. ; Oiwa, A. ; Tarucha, S.

Author_Institution

Inst. of Ind. Sci., Tokyo Univ., Tokyo

Volume

1

fYear

2006

fDate

22-25 Oct. 2006

Firstpage

220

Lastpage

221

Abstract

Recent progress in nanofabrication technologies allows us to access to quantum mechanically well-defined electronic systems, such as quantum dots (QDs) and molecules. Such nanojunctions are expected to open a new paradigm in future optoelectronic devices. We have investigated electron transport through single self-assembled InAs QDs and molecules, using metallic leads with nanogaps. InAs QDs exhibited clear shell filling and novel transport phenomena such as Kondo effect. Furthermore, we have observed current-voltage characteristics molecular junctions fabricated by precisely controlled electromigration technique.

Keywords

III-V semiconductors; electron transport theory; indium compounds; nanotechnology; self-assembly; semiconductor quantum dots; InAs; InAs - Interface; current-voltage characteristics; electromigration technique; electron transport; electronic properties; molecular junctions; nanofabrication technologies; nanogap metallic electrodes; nanojunctions; optoelectronic devices; quantum dots; self-assembled InAs QD; Current-voltage characteristics; Electrodes; Electrons; Filling; Nanofabrication; Nanoscale devices; Optoelectronic devices; Quantum dots; Quantum mechanics; Self-assembly; molecular junctions; quantum dots; shell structures; single electron; tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE

Conference_Location

Gyeongju

Print_ISBN

978-1-4244-0540-4

Electronic_ISBN

978-1-4244-0541-1

Type

conf

DOI

10.1109/NMDC.2006.4388846

Filename

4388846