Effect of resistance of TSV´s on performance of boost converter for low power 3D SSD with NAND flash memories

This paper investigates the effect of the TSV resistance (R_TSV) on the performance of boost converters for Solid State Drive (SSD) using circuit simulation. When R_TSV is 0 Omega, both the rising time (t_rise) from 0 V to 15 V and the energy during boosting (E_loss) of the output voltage (V_OUT) are 10.6% and 6.6% of the conventional charge pump respectively. In contrast, when R_TSV is 200 Omega, for example, t_rise is 30.1% and E_loss is 22.8% of the conventional charge pump. Besides, V_OUT cannot be boosted above 20 V when R_TSV is larger than 210 Omega. Therefore, in order to maintain the advantages of the boost converter over the charge pump in terms of t_rise and E_loss, the reduction of R_TSV is very important.