DocumentCode
2215769
Title
Broadband, 0.25 μm CMOS LNAs with sub-2dB NF for GSM applications
Author
Qiuting Huang ; Orsatti, Paolo ; Piazza, Francesco
Author_Institution
Integrated Syst. Lab., Fed. Inst. of Technol., Zurich
fYear
1998
fDate
11-14 May 1998
Firstpage
67
Lastpage
70
Abstract
Noise figures below 2 dB are generally hard to achieve by integrated LNAs with few external components, whether the technology is GaAs or bipolar. This paper reports the design of CMOS LNAs with NF as low as 1.74, while providing 50 Ω impedance at both input and output, good linearity for both small (IP3) and large signals (CP) and insensitivity to component tolerances. The best LNA consumes only 10.8 mA and requires only one external inductor
Keywords
CMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; cellular radio; integrated circuit noise; wideband amplifiers; 0.25 micron; 1.74 dB; 10.8 mA; CMOS LNAs; GSM applications; component tolerances; external inductor; linearity; noise figures; Application specific integrated circuits; Attenuation; Costs; GSM; Impedance; Matched filters; Noise figure; Noise measurement; Passband; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference, 1998. Proceedings of the IEEE 1998
Conference_Location
Santa Clara, CA
Print_ISBN
0-7803-4292-5
Type
conf
DOI
10.1109/CICC.1998.694908
Filename
694908
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