Defect analysis of N-doped p-type ZnO film fabricated by magnetron sputtering via photoluminescence spectra

Author

Jin, Hu-Jie ; Kim, Deok-Kyu ; Park, Choon-Bae

Author_Institution

Wonkwang Univ., Iksan

Volume

1

fYear

2006

fDate

22-25 Oct. 2006

Firstpage

542

Lastpage

543

Abstract

ZnO is a promising material to make high efficient ultraviolet (UV) or blue light emitting diodes (LEDs) due to its large binding energy and energy bandgap. In present study, we prepared an N-doped p-type ZnO thin film on (100) silicon substrate by RF magnetron sputtering in the mixture ambient of N₂ and O₂. accompanying with in-situ annealing at low pressure of 10Torr in O₂ at 800degC. Photoluminescence (PL) analysis of the film showed UV emission related to exciton and donor-acceptor pair transition (DAP) and visible emission related to various kinds of defects. Via PL spectra analysis the reason of p-type conversion of ZnO thin film can be explained, which is in favor of getting high quality p-type ZnO films.

Keywords

binding energy; light emitting diodes; photoluminescence; semiconductor doping; sputtering; thin film devices; zinc compounds; N-doped p-type ZnO film; ZnO; ZnO - Binary; binding energy; blue light emitting diodes; defect analysis; donor-acceptor pair transition; energy bandgap; magnetron sputtering; photoluminescence spectra; visible emission; Light emitting diodes; Magnetic analysis; Magnetic materials; Photoluminescence; Photonic band gap; Semiconductor thin films; Silicon; Sputtering; Substrates; Zinc oxide; N-doped p-type ZnO film; RF magnetron sputtering; defect; photoluminescence(PL);

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE

Conference_Location

Gyeongju

Print_ISBN

978-1-4244-0541-1

Electronic_ISBN

978-1-4244-0541-1

Type

conf

DOI

10.1109/NMDC.2006.4388893

Filename

4388893