A 10 mW inductorless, broadband CMOS low noise amplifier for 900 MHz wireless communications

Author

Janssens, Johan ; Crols, Jan ; Steyaert, Michiel

Author_Institution

ESAT, Katholieke Univ., Leuven, Heverlee, Belgium

fYear

1998

fDate

11-14 May 1998

Firstpage

75

Lastpage

78

Abstract

A low-power, broadband LNA has been integrated in a standard 0.5 μm CMOS process. The presented CMOS LNA offers a noise figure better than 3.3 dB up to 970 MHz while drawing only 3.4 mA from a 3.0 V supply. The circuit employs a topology without on-chip inductors and does not require any tuning or trimming to achieve the performance. The amplifier provides a gain of 14.8 dB in a 700 MHz wide band and has a gain of 9 dB at 900 MHz. The input IP3 is -4.7 dBm. The reverse isolation is higher than 41 dB, making it fit for insertion in a CMOS low-IF receiver

Keywords

CMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; integrated circuit noise; land mobile radio; wideband amplifiers; 0.5 micron; 10 mW; 3 V; 3.3 dB; 3.4 mA; 700 MHz; 9 to 14.8 dB; 900 to 970 MHz; UHF wireless communications; broadband CMOS LNA; inductorless implementation; low noise amplifier; low-IF receiver; Band pass filters; Broadband amplifiers; CMOS technology; Circuit topology; Energy consumption; Frequency; Inductors; Isolation technology; Low-noise amplifiers; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 1998. Proceedings of the IEEE 1998

Conference_Location

Santa Clara, CA

Print_ISBN

0-7803-4292-5

Type

conf

DOI

10.1109/CICC.1998.694910

Filename

694910