Title :
Scaling studies of coaxially gated carbon nanotube MOSFETs
Author :
Ahn, Chiyui ; Shin, Mincheol
Author_Institution :
Sch. of Eng., Inf. & Commun. Univ., Daejeon
Abstract :
The scaling issues for carbon nanotube field-effect transistors with doped nanotubes as source/drain extensions are studied by solving the two-dimensional Poisson equation self-consistently with non-equilibrium Green´s function formalism.
Keywords :
MOSFET; Poisson equation; carbon nanotubes; semiconductor doping; Green function formalism; MOSFET; Poisson equation; carbon nanotube field-effect transistors; coaxially gated carbon nanotube; doped nanotubes; CNTFETs; Carbon nanotubes; Charge carrier density; Coaxial components; Dielectric materials; Effective mass; Green´s function methods; MOSFETs; Poisson equations; Voltage; Carbon nanotube field-effect transistors; Nonequilibrium Greens fucntion method; quantum device simulations;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location :
Gyeongju
Print_ISBN :
978-1-4244-0540-4
Electronic_ISBN :
978-1-4244-0541-1
DOI :
10.1109/NMDC.2006.4388896
